| Manufacturer |
Nexperia |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
SOT-23-3 |
| Transistor Polarity |
P-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
50 V |
| Id – Continuous Drain Current |
180 mA |
| Rds On – Drain-Source Resistance |
7.5 Ohms |
| Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage |
1.1 V |
| Qg – Gate Charge |
260 pC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
420 mW |
| Channel Mode |
Enhancement |
| Brand |
Nexperia |
| Configuration |
Single |
| Fall Time |
25 ns |
| Product Type |
MOSFET |
| Rise Time |
11 ns |
| Factory Pack Quantity |
3000 |
| Subcategory |
MOSFETs |
| Transistor Type |
1 P-Channel Trench MOSFET |
| Typical Turn-Off Delay Time |
48 ns |
| Typical Turn-On Delay Time |
13 ns |
| Part # Aliases |
934065304215 |
| Unit Weight |
0.000282 oz |
| Qualification |
AEC-Q101 |