The MMBT3904LT1G is a small NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is widely used in various electronic circuits for amplification and switching applications. Here are its key features:
Key Features
- Type: NPN Bipolar Junction Transistor
- Package Type: SOT-23 (SOT-23-3), a compact surface-mount package
- Maximum Collector-Emitter Voltage (Vceo): 40V
- Maximum Collector-Base Voltage (Vcbo): 60V
- Maximum Emitter-Base Voltage (Vebo): 6V
- Collector Current (Ic): 200mA
- DC Current Gain (hFE): 100 to 300 (at Ic = 10mA, Vce = 10V)
- Power Dissipation (Pd): 400mW
Characteristics
- Switching Speed: Suitable for high-speed switching applications
- Current Gain: Provides good amplification characteristics
- Temperature Range: Typically -55°C to +150°C
Applications
- Signal Amplification: Used in low-power amplifier circuits
- Switching: Suitable for switching applications in digital circuits
- Low-Noise Circuits: Can be used in low-noise signal amplification circuits
The MMBT3904LT1G is a versatile and reliable transistor that is ideal for various electronic applications due to its compact size and efficient performance.