IKW75N65ES5

The IKW75N65ES5 is a high-performance N-channel IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, designed for demanding power switching applications. Here’s a detailed description:

• Type: N-channel IGBT, combining high current handling capability with low on-state voltage drop for efficient power switching.
• Voltage Rating: Maximum collector-emitter voltage (V_CE) of 650V, making it suitable for high-voltage applications.
• Current Rating: Continuous collector current of up to 75A, providing robust performance for high-current applications.
• Switching Characteristics: Features low on-state voltage (V_CE(on)) and fast switching times, which enhance efficiency and reduce switching losses.
• Power Dissipation: Designed to handle significant power dissipation, ensuring reliable operation under high-load conditions.
• Package: Housed in a TO-247 package, which provides efficient heat dissipation and ease of integration into power circuits.
• Applications: Ideal for use in power inverters, motor drives, induction heating, and other power conversion systems requiring high efficiency and reliable performance.

The IKW75N65ES5 is widely used in industrial, automotive, and consumer electronics for its high performance, reliability, and efficient power handling capabilities.