FDV301N

The FDV301N is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage and low-power applications. It is manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key features and specifications:

1. Type:
   • N-Channel MOSFET: Designed for use in switching and amplification applications.
2. Electrical Characteristics:
   • Gate-Source Voltage (Vgs): Maximum rating of ±20V, allowing for versatile gate drive requirements.
   • Drain-Source Voltage (Vds): Maximum of 30V, suitable for low to moderate voltage applications.
   • Continuous Drain Current (Id): Up to 4.0A at a case temperature of 25°C, providing sufficient current handling capability for many circuits.
   • Rds(on) (On-Resistance): Low on-resistance typically 0.15Ω at Vgs = 4.5V, ensuring efficient switching with minimal power loss.
   • Gate Threshold Voltage (Vgs(th)): Typically between 1.0V and 3.0V, which allows for efficient operation at low gate voltages.
3. Switching Characteristics:
   • Fast Switching Speed: Capable of high-speed switching, which is ideal for high-frequency applications.
   • Low Gate Charge: Provides quick response with a low gate charge, enhancing switching performance.
4. Package Type:
   • SOT-23 Package: A compact surface-mount package with three terminals, suitable for space-constrained applications.
5. Applications:
   • Low-Voltage Switching: Ideal for switching applications in low-voltage circuits.
   • Power Management: Used in power management systems for efficient control of power delivery.
   • Signal Amplification: Suitable for signal amplification in various electronic circuits.
   • Battery-Powered Devices: Well-suited for use in battery-operated devices due to its low power consumption.
6. Features:
   • Low Power Consumption: Designed to minimize power loss and heat generation.
   • High Efficiency: Provides efficient switching performance with minimal resistance and power loss.

The FDV301N MOSFET is a versatile and efficient component for a range of low-voltage switching and amplification applications, offering low on-resistance, fast switching capabilities, and a compact package for easy integration into various electronic designs.