BSS138LT1G

The BSS138LT1G is an N-channel MOSFET designed for low-voltage and low-current switching applications. Here are its key features:

1. N-Channel MOSFET: Provides efficient switching and amplification for electronic circuits with an N-channel configuration.
2. Low Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) of 1.0V to 3.0V, allowing it to operate efficiently at lower gate drive voltages.
3. Low On-Resistance: Offers a low on-resistance (R_DS(on)) of approximately 3.5Ω, which minimizes power loss during operation.
4. High-Speed Switching: Capable of fast switching speeds, making it suitable for high-speed and high-frequency applications.
5. Compact Package: Housed in a small SOT-23 package, which is ideal for space-constrained designs.
6. Applications: Commonly used in low-voltage power switching, level shifting, and signal amplification in portable electronic devices and low-current circuits.
7. Low Power Consumption: Designed to operate with low power consumption while providing reliable performance.

The BSS138LT1G is a versatile MOSFET suitable for a range of applications requiring efficient switching and compact design.