IRLML6401TRPBF

The IRLML6401TRPBF is a N-channel MOSFET designed for low-voltage switching and amplification applications. Here’s a detailed description:

• Type: N-Channel MOSFET.
• Gate Threshold Voltage: Low gate threshold voltage, typically 1.0V to 2.5V, allowing it to switch on with low drive voltage.
• RDS(on): Features a low on-resistance (RDS(on)) of around 0.2 ohms at VGS = 4.5V, ensuring efficient conduction with minimal power loss.
• Continuous Drain Current: Capable of handling a continuous drain current of up to 3.5A, making it suitable for various low to moderate power applications.
• Pulsed Drain Current: Supports higher pulsed drain currents, up to 8A, allowing for transient load handling.
• Package: Comes in a compact SOT-23-3 package, which is ideal for surface-mount technology and space-constrained designs.
• Applications: Commonly used in low-voltage switching, signal amplification, power management, and load switching applications. It is suitable for use in battery-powered devices, power supplies, and other electronic circuits requiring efficient switching.

The IRLML6401TRPBF is known for its low gate threshold voltage and low on-resistance, making it an effective choice for efficient and reliable switching in low-voltage electronic systems.