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FM25CL64B-GTR

Manufacturer Part Number: FM25CL64B-GTR Manufacturer / Brand: Infineon
Part of Description: F-RAM 64kbit Serial SPI 3V FRAM Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
Datasheets:

Product parameters

ManufacturerInfineon
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOIC-8
Supply Voltage – Min2.7 V
Supply Voltage – Max3.65 V
PackagingReel
Minimum Operating Temperature– 40 C
Maximum Operating Temperature+ 85 C
Factory Pack Quantity2500
SubcategoryMemory & Data Storage
Width1.6 mm
Unit Weight0.019048 oz

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    SUBMIT INFORMATION

    The FM25CL64B-GTR is a 64Kb (8K x 8) non-volatile F-RAM (Ferroelectric Random Access Memory) device from Cypress Semiconductor. Key features of the FM25CL64B-GTR include:

    1. Non-Volatile Memory: Retains data without the need for a power source, ensuring data integrity even during power failures.
    2. High-Speed Operation: Provides fast read and write access times, comparable to those of standard RAM, making it suitable for high-performance applications.
    3. Low Power Consumption: Consumes very little power during both active operation and standby modes, which is ideal for battery-powered devices.
    4. Unlimited Write Endurance: Offers virtually unlimited write endurance, allowing for millions of write cycles, making it more durable than traditional EEPROM or Flash memory.
    5. Serial Interface: Utilizes an SPI (Serial Peripheral Interface) for communication, which simplifies integration into a wide range of systems.
    6. Data Retention: Capable of retaining data for up to 10 years, ensuring long-term reliability.
    7. Package Type: Available in an 8-pin SOIC package, which is suitable for various compact designs.
    8. Applications: Ideal for use in applications requiring high reliability and endurance, such as industrial control systems, metering, medical devices, and data logging.

    The FM25CL64B-GTR provides a reliable and efficient non-volatile memory solution, combining the speed and endurance of RAM with the data retention capabilities of non-volatile memory.

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