The CSD95410RRB is a MOSFET from Texas Instruments designed for high-efficiency power conversion applications. Key features include:
- Type: N-channel MOSFET, optimized for high-speed switching applications.
- Drain-Source Voltage (Vds): 40 V, suitable for low-voltage power management circuits.
- Continuous Drain Current (Id): 50 A, capable of handling substantial current loads.
- Low Rds(on): Features a low on-resistance of 4.5 mΩ, which helps reduce conduction losses and improve efficiency.
- Package: Available in a 5×6 mm PowerPad™ package, designed for compact and efficient thermal management.
- Gate Drive: Designed for fast switching with minimal gate charge, which enhances efficiency in high-frequency applications.
- Applications: Ideal for use in DC-DC converters, power management systems, and other high-efficiency power applications.
The CSD95410RRB is well-suited for designers seeking high-performance MOSFETs for efficient power management and conversion in compact, thermally demanding environments.