NTMFS5C442NT3G

The NTMFS5C442NT3G is a robust N-channel MOSFET designed for high-efficiency power management and switching applications. Here are its key features and specifications:

1. Voltage and Current Ratings:
   • Maximum Drain-Source Voltage (Vds): 60V
   • Continuous Drain Current (Id): 46A
2. Low On-Resistance:
   • The NTMFS5C442NT3G features a low on-resistance (Rds(on)) of approximately 4.4mΩ at a gate-source voltage (Vgs) of 10V. This low on-resistance minimizes conduction losses and enhances overall efficiency during operation.
3. Gate Threshold Voltage:
   • The gate threshold voltage typically ranges from 1.0V to 2.5V, allowing it to be driven by low-voltage control signals, making it suitable for various low-voltage applications.
4. Fast Switching Speed:
   • This MOSFET is optimized for fast switching, providing rapid rise and fall times, making it ideal for applications in high-frequency environments such as DC-DC converters and power supplies.
5. Applications:
   • Commonly used in power management systems, motor drivers, DC-DC converters, and other high-efficiency applications, the NTMFS5C442NT3G is versatile and effective for various electronic designs.
6. Package Options:
   • The NTMFS5C442NT3G is available in a compact DPAK package, which allows for efficient thermal dissipation and easy integration into circuit boards.

Overall, the NTMFS5C442NT3G is a reliable and high-performance N-channel MOSFET that is well-suited for a wide range of power management applications.