2N7002

Manufacturer Part Number: 2N7002 Manufacturer / Brand: ON
Part of Description: MOSFETs N-CHANNEL 60V 115mA Lead Free Status / RoHS Status: 16-bit Microcontrollers - MCU MCU 3/5V 56K Pb-free 64-QFP
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
Datasheets:

Product parameters

ManufacturerON
DetailsRoHS
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Minimum Operating Temperature– 55 C
Maximum Operating Temperature+150 C
PackagingReel
Moisture SensitiveYes
Series2N7002
Factory Pack Quantity3000
SubcategoryTransistors
Product TypeMOSFETs
Width1.3 mm
Unit Weight0.000282 oz

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    SUBMIT INFORMATION

    The 2N7002 is an N-channel enhancement-mode vertical DMOS FET (Field-Effect Transistor) designed for a wide range of switching and amplifying applications. It features a low threshold voltage, high breakdown voltage, high input impedance, and low input capacitance, making it suitable for power supply circuits, drivers for relays, hammers, solenoids, lamps, memories, displays, and bipolar transistors, among others.

    Here are some key characteristics and specifications of the 2N7002:

    1. Package Type: Available in packages such as TO-236AB (SOT-23) and SOT-363, depending on the manufacturer and variant.
    2. Drain-to-Source Breakdown Voltage (BVDSS): Up to 60V, ensuring robust performance in high-voltage applications.
    3. Gate-to-Source Voltage (VGS): ±30V, providing a wide operating range for the gate voltage.
    4. Maximum Drain Current (ID): Typically specified with a maximum continuous drain current and pulsed drain current rating, which can vary based on the specific variant and package.
    5. On-Resistance (RDS(ON)): A low on-resistance value, which is crucial for minimizing power loss during switching operations.
    6. Fast Switching Speeds: The 2N7002 offers fast switching speeds, making it suitable for high-frequency applications.
    7. High Input Impedance: The high input impedance of the 2N7002 allows it to be used in circuits where high impedance is required.
    8. Low Input Capacitance: The low input capacitance reduces the charging and discharging currents required to switch the gate voltage, leading to lower power consumption.
    9. Enhanced Thermal Stability: The device exhibits excellent thermal stability and power handling capabilities.

    Furthermore, the 2N7002 is RoHS compliant, meaning it meets the restrictions on hazardous substances in electrical and electronic equipment as specified by the European Union.

    In summary, the 2N7002 is a versatile and reliable N-channel enhancement-mode DMOS FET suitable for various applications requiring high-voltage, high-speed, and low-power switching and amplifying capabilities.

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