IKW75N60H3

Manufacturer Part Number: IKW75N60H3 Manufacturer / Brand: Infineon
Part of Description: IGBTs INDUSTRY 14 Lead Free Status / RoHS Status: Digital to Analog Converters - DAC Dual, 16-Bit, 1230 MSPS, TxDAC+ Digital-to-Analog Converter
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
Datasheets:

Product parameters

ManufacturerInfineon
DetailsRoHS
Mounting StyleSMD/SMT
Package / CaseTO-247-3
Minimum Operating Temperature– 40 C
Maximum Operating Temperature+175 C
PackagingReel
Moisture SensitiveYes
Product TypeIGBT Transistors
Factory Pack Quantity240
SubcategoryIGBTs
Gate-Emitter Leakage Current100 nA
Width5.31 mm
Part # AliasesIKW75N60H3FKSA1 SP000906806 IKW75N6H3XK IKW75N60H3FKSA1

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    SUBMIT INFORMATION

    The IKW75N60H3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from Infineon, specifically designed for applications requiring high power handling capabilities and efficient energy conversion. This device combines the robustness of IGBT technology with advanced packaging and design features to meet the demands of modern power electronics systems.

    Key Features:

    • High Voltage Rating: The IKW75N60H3 is rated for a maximum voltage of 600V, making it suitable for applications with high voltage requirements such as motor drives, uninterruptible power supplies (UPS), and welding equipment.
    • High Current Handling: With a maximum continuous current rating of 75A at 100°C and a pulse current capability of up to 225A, this device can handle high current loads efficiently.
    • Low Switching Losses: The IKW75N60H3 incorporates Infineon’s renowned TRENCHSTOP™ technology, which enables excellent Vce(sat) behavior and low switching losses. This contributes to higher efficiency and reduced thermal stress in the system.
    • Advanced Packaging: The device is packaged in a TO-247-3 format, which provides a robust and reliable platform for high-power applications. The TO-247 package allows for efficient heat dissipation, ensuring that the IGBT operates within its safe operating area even under demanding conditions.
    • Fast Switching Speed: With a switching frequency range of 20kHz to 100kHz, the IKW75N60H3 is capable of fast switching, which is essential for reducing harmonic distortions and improving the overall performance of power electronic systems.
    • High Power Density: The combination of high current handling, low switching losses, and advanced packaging results in a high power density for the IKW75N60H3. This makes it an ideal choice for applications where space is a constraint and high power density is required.
    • RoHS Compliant: The IKW75N60H3 is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it meets environmental standards and regulations.

    Applications:

    The IKW75N60H3 is suitable for a wide range of applications in the power electronics industry, including but not limited to:

    • Motor drives for industrial automation and electric vehicles
    • Uninterruptible power supplies (UPS) for critical load protection
    • Welding equipment for high-current applications
    • Power converters for renewable energy systems such as wind and solar power plants
    • General-purpose power supplies and inverters

    Overall, the IKW75N60H3 is a versatile and high-performance IGBT device that offers a combination of high voltage rating, high current handling, low switching losses, and advanced packaging. Its fast switching speed and high power density make it an ideal choice for applications in the power electronics industry.

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