2SC4116BLTE85LF

Product parameters

Manufacturer:	Toshiba
Product Category:	Bipolar Transistors – BJT
RoHS:	Details
Mounting Style:	SMD/SMT
Package / Case:	SOT-323-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	50 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	100 mV
Maximum DC Collector Current:	150 mA
Pd – Power Dissipation:	100 mW
Gain Bandwidth Product fT:	80 MHz
Series:	2SC4116
Packaging:	Reel
Brand:	Toshiba
Continuous Collector Current:	150 mA
DC Collector/Base Gain hfe Min:	70
DC Current Gain hFE Max:	700
Product Type:	BJTs – Bipolar Transistors
Factory Pack Quantity: Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	Si
Unit Weight:	0.000176 oz