AT45DB321E-SHF-T

The AT45DB321E-SHF-T is a high-performance, non-volatile Flash memory IC designed for a wide range of digital voice, image, program code, and data storage applications. It offers a storage capacity of 32Mb (4M x 8-bit), organized as 8,192 pages of 512 bytes or 528 bytes each (default page size is 528 bytes). The device features a serial Peripheral Interface (SPI) compatible with SPI modes 0 and 3, and it supports the RapidS serial interface for high-speed operation.

With a single power supply voltage range of 2.3V to 3.6V, the AT45DB321E-SHF-T is capable of continuous read capability through the entire array and supports a maximum clock frequency of up to 85MHz. It also offers a low-power read option up to 15MHz, with a clock-to-output time (tV) of 6ns maximum.

The AT45DB321E-SHF-T includes two fully independent SRAM data buffers (512/528 bytes each) that allow receiving data while a page in the main memory is being reprogrammed. This interleaving between both buffers can dramatically increase a system’s ability to write a continuous data stream. Additionally, the SRAM buffers can be used as additional system scratch pad memory.

The device provides flexible programming options, including Byte/Page Program (1 to 512/528 bytes) directly into main memory, and flexible erase options such as Page Erase (512/528 bytes), Block Erase (4KB), Sector Erase (64KB), and Chip Erase (32Mbits). It also features advanced hardware and software data protection features, including individual sector protection and a 128-byte, One-Time Programmable (OTP) Security Register.

The AT45DB321E-SHF-T is packaged in an 8-lead SOIC (0.208″ wide) with a RoHS-compliant, halogen-free, and phthalate-free packaging option. It offers a typical Ultra-Deep Power-Down current of 400nA, a Deep Power-Down current of 3µA, a Standby current of 25µA, and an Active Read current of 11mA. The device has an endurance of 100,000 program/erase cycles per page minimum and a data retention of 20 years.

Overall, the AT45DB321E-SHF-T is an ideal choice for applications requiring high-speed, high-density, and reliable Flash memory solutions.