The IKQ75N120CH3 is a high-performance Insulated-Gate Bipolar Transistor (IGBT) module from Infineon Technologies, designed for use in power electronics applications where efficient switching and high current handling are essential. Here are its key features and specifications:
- Type:
- IGBT Module: Combines the efficiency of a MOSFET with the high-current and high-voltage capabilities of a bipolar transistor.
- Performance:
- Voltage Rating: Capable of withstanding a maximum collector-emitter voltage (Vce) of up to 1200V, making it suitable for high-voltage applications.
- Current Rating: Can handle a continuous collector current (Ic) of up to 75A, supporting high power loads.
- Low Switching Losses: Designed for low switching losses, improving overall efficiency in power conversion applications.
- Package Type:
- TO-247 Package: Comes in a TO-247 package, which is designed for easy mounting and effective heat dissipation.
- Switching Frequency:
- High Switching Frequency: Optimized for high switching frequency applications, making it suitable for use in inverters, motor drives, and power converters.
- Thermal Management:
- Efficient Heat Dissipation: Features efficient thermal management, which allows it to operate reliably under high power conditions.
- Applications:
- Power Conversion: Ideal for use in inverters and converters in renewable energy systems such as solar inverters and wind turbines.
- Industrial Motor Drives: Suitable for industrial motor drives, where high efficiency and reliability are critical.
- Electric Vehicles: Can be used in electric vehicle powertrains and charging infrastructure.
- Uninterruptible Power Supplies (UPS): Ensures reliable operation in UPS systems, providing stable power in critical applications.
The IKQ75N120CH3 is a robust and efficient IGBT module designed to handle high power levels with minimal losses, making it an excellent choice for demanding applications in power conversion, industrial automation, and renewable energy systems.