IPA60R099P7

1. Type:
   • N-channel MOSFET for high-power switching applications.
2. Voltage Rating:
   • 600V maximum drain-to-source voltage (V_DS), suitable for high-voltage applications.
3. Current Rating:
   • Capable of handling up to 60A continuous drain current, making it suitable for high-current applications.
4. On-Resistance:
   • Features a low R_DS(on) of 0.099 Ω to reduce conduction losses and improve efficiency.
5. Switching Speed:
   • Fast switching capabilities, optimizing performance in high-frequency applications.
6. Gate Charge:
   • Low total gate charge of 93 nC, which helps in reducing the drive power requirements and improving switching efficiency.
7. Package:
   • Housed in a TO-247 package, designed for effective thermal management and high power dissipation.
8. Applications:
   • Ideal for use in power supplies, motor drives, industrial equipment, and other high-power and high-voltage switching applications.

The IPA60R099P7 provides a robust solution for high-voltage, high-current switching needs with its low on-resistance and fast switching characteristics, making it suitable for demanding power management applications.