IRF630NPBF

The IRF630NPBF is an N-channel MOSFET designed for high-speed switching applications. Here’s a detailed description:

• Type: N-Channel Power MOSFET.
• Drain-Source Voltage (Vds): Rated at 200V, making it suitable for high-voltage applications.
• Continuous Drain Current (Id): Capable of handling up to 8A, providing sufficient current for various power applications.
• Rds(on): Low on-resistance of approximately 0.35 ohms (at Vgs = 10V), which helps reduce power losses and improve efficiency.
• Gate Charge: Moderate gate charge (typically around 40 nC), which supports good switching performance.
• Package: Available in a TO-220 package, which offers effective thermal management and ease of mounting.
• Applications: Ideal for use in switching power supplies, motor drives, and other high-voltage power applications.
• Features:
  • Fast Switching: Designed for efficient high-speed switching.
  • Thermal Management: TO-220 package ensures efficient heat dissipation.

The IRF630NPBF provides reliable high-voltage switching performance with low on-resistance and is suitable for demanding power applications where efficient switching and thermal management are essential.