MT29F2G08ABAEAH4-IT:E

The MT29F2G08ABAEAH4-IT:E is a NAND flash memory integrated circuit (IC) manufactured by Micron Technology. This component offers a storage capacity of 2 gigabits (Gb), making it suitable for a variety of high-density data storage applications.

Key features and specifications of the MT29F2G08ABAEAH4-IT:E include:

• Storage Capacity: 2Gb, providing ample space for storing large amounts of data.
• NAND Flash Technology: Utilizes NAND flash memory, which is known for its high density, fast read/write speeds, and long-term data retention capabilities.
• Compact Design: The component features a small footprint, making it ideal for use in space-constrained applications.
• Reliability and Durability: Designed to withstand the rigors of daily use, ensuring reliable performance and long-term durability.
• Interface and Protocol Support: Supports various interface protocols and commands, enabling seamless integration with a wide range of systems and devices.
• Temperature Range: Suitable for operation within a specified temperature range, ensuring stable performance in different environmental conditions.

In addition, the “IT:E” suffix in the component’s name may indicate specific packaging, temperature grade, or other characteristics that are tailored to meet the requirements of particular applications.

Overall, the MT29F2G08ABAEAH4-IT:E is a versatile and reliable NAND flash memory IC that offers high-density storage solutions for a wide range of applications, including solid-state drives (SSDs), embedded systems, and other storage-intensive devices. For detailed specifications, performance characteristics, and integration guidelines, please refer to the official datasheet provided by Micron Technology.