MT40A1G16KNR-075:E

The MT40A1G16KNR-075 is a high-performance DRAM (Dynamic Random Access Memory) chip designed for high-speed data storage and access in various electronic systems. Here’s a detailed description:

• Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory).
• Density: 16 Gbits (2 GB), providing substantial memory capacity for demanding applications.
• Organization: Organized as 1G x 16, allowing for 16 data bits per memory access, optimizing data throughput.
• Speed: Operates at a data rate of 1333 Mbps (effective speed), with an I/O bus speed of 667 MHz, ensuring fast data access and transfer.
• Package: Available in a compact 78-ball FBGA (Fine Ball Grid Array) package, facilitating high-density mounting and efficient use of PCB space.
• Features:
  • Burst Length: Supports burst lengths of 8, enabling efficient data access patterns and reduced latency.
  • Refresh: Features auto-refresh and self-refresh capabilities to maintain data integrity during periods of inactivity.
  • Power Management: Includes low power modes to reduce power consumption during idle periods, making it suitable for energy-efficient designs.
• Applications: Ideal for use in high-performance computing systems, networking equipment, automotive electronics, and other applications requiring large and fast memory resources.

The MT40A1G16KNR-075is designed for high-speed and high-capacity memory needs, providing reliable performance and efficiency for advanced electronic systems.