MT41K256M16TW-107:P

1. Type:
   • DDR3 SDRAM: Provides high-speed data transfer and efficient memory performance suitable for a wide range of applications.
2. Memory Size:
   • 256 Meg x 16 (4 Gb): The device has a memory configuration of 256 megabits by 16 bits, totaling 4 gigabits (Gb) of storage capacity.
3. Speed Grade:
   • Speed Grade 107: Indicates a maximum clock speed of 1.333 GHz (DDR3-1333), which translates to a data rate of 1333 MT/s (megatransfers per second).
4. Operating Voltage:
   • Voltage Supply: Operates with a 1.5V ±0.075V power supply, typical for DDR3 SDRAM devices.
5. Package Type:
   • FBGA (Fine Ball Grid Array) Package: Encased in a 60-ball FBGA package, specifically in a 78-ball configuration, providing a compact form factor suitable for high-density applications.
6. Features:
   • Burst Length: Supports burst lengths of 4, 8, and full-page for flexible data transfer rates.
   • Latency: Designed for low-latency operation, enhancing data access speeds.
   • Refresh Rate: Incorporates self-refresh and auto-refresh functions to maintain data integrity during operation.
7. Applications:
   • Computing: Used in desktop computers, laptops, and servers to provide fast and reliable memory performance.
   • Embedded Systems: Suitable for embedded systems requiring high-speed memory access.
   • Consumer Electronics: Applied in various consumer electronics where high-capacity and high-speed memory are needed.
8. Features:
   • ECC (Error Correction Code): Some variants may support ECC for improved reliability and error detection, though specific support should be confirmed based on application requirements.
   • Data Integrity: Designed to ensure data integrity and stability during high-speed operations.

The MT41K256M16TW-107

offers high-speed data access and substantial memory capacity, making it ideal for use in performance-critical computing and embedded systems. Its DDR3 architecture ensures efficient data handling and compatibility with modern electronic devices.