Manufacturer: |
Renesas Electronics |
Product Category: |
MOSFET |
RoHS: |
Details |
Technology: |
Si |
Mounting Style: |
SMD/SMT |
Package / Case: |
TO-252-4 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds – Drain-Source Breakdown Voltage: |
40 V |
Id – Continuous Drain Current: |
75 A |
Rds On – Drain-Source Resistance: |
5.7 mOhms |
Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage: |
4 V |
Qg – Gate Charge: |
30 nC |
Maximum Operating Temperature: |
+ 175 C |
Pd – Power Dissipation: |
75 W |
Channel Mode: |
Enhancement |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Brand: |
Renesas Electronics |
Configuration: |
Single |
Fall Time: |
5 ns |
Forward Transconductance – Min: |
20 S |
Height: |
2.65 mm |
Length: |
6.5 mm |
Product Type: |
MOSFET |
Rise Time: |
5 ns |
Factory Pack Quantity: Factory Pack Quantity: |
2500 |
Subcategory: |
MOSFETs |
Transistor Type: |
1 N-Channel |
Typical Turn-Off Delay Time: |
37 ns |
Typical Turn-On Delay Time: |
15 ns |
Width: |
6.1 mm |