NVMFD5C674NLT1G

The NVMFD5C674NLT1G is a dual N-channel power MOSFET from ON Semiconductor. It features a high breakdown voltage of 60V and a low on-resistance of 14.4mΩ, making it ideal for power management applications that require efficient switching and low power loss.

Key Features and Specifications:

• Dual N-Channel MOSFET: The NVMFD5C674NLT1G is a dual-channel device, providing two independent MOSFETs in a single package.
• High Breakdown Voltage: With a maximum drain-to-source breakdown voltage of 60V, the NVMFD5C674NLT1G can handle high-voltage applications with ease.
• Low On-Resistance: The low on-resistance of 14.4mΩ reduces power loss and increases efficiency in switching circuits.
• Compact Package: The device is packaged in a small outline package (SOP) with a footprint of 5x6mm, making it suitable for compact designs.
• AEC-Q101 Qualified: The NVMFD5C674NLT1G is qualified to AEC-Q101 standards, making it suitable for automotive applications.
• Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations, ensuring environmental friendliness.

Applications:

The NVMFD5C674NLT1G is suitable for a wide range of applications, including but not limited to:

• Power management in automotive electronics
• DC-DC converters
• Load switches
• Motor drivers
• Battery management systems

Additional Notes:

• The NVMFD5C674NLT1G offers high reliability and performance, making it an excellent choice for demanding applications.
• It is available in various packaging options, including tape and reel, for easy integration into automated assembly processes.
• The device operates over a wide temperature range, making it suitable for use in harsh environments.

Overall, the NVMFD5C674NLT1G is a versatile and powerful dual N-channel MOSFET that offers high performance, reliability, and compact packaging. Its extensive feature set and wide range of applications make it an excellent choice for designers seeking a high-quality, efficient power management solution.