SPW47N60C3

SPW47N60C3 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured by Infineon Technologies AG, a leading semiconductor company. It belongs to the CoolMOS series, which is known for its high efficiency and reliability.

Here are the key specifications and features of SPW47N60C3:

1. Configuration: Single-channel N-channel MOSFET.
2. Package: TO-247AC-3, a robust package suitable for high-power applications.
3. Maximum Drain-Source Voltage (Vdss): 650V, which allows it to handle high voltage levels.
4. Continuous Drain Current (Id): 47A, indicating its capability to carry significant current without overheating.
5. Maximum Power Dissipation (Ptot): 415W, ensuring efficient heat dissipation and long-term stability.
6. On-State Resistance (RDS(on)): 70mΩ at 10V gate-source voltage and 30A drain current, contributing to low power loss during operation.
7. Threshold Voltage (Vgs(th)): 3.9V, the minimum gate-source voltage required to turn on the MOSFET.
8. Gate Charge (Qg): 320nC, representing the amount of charge needed to switch the MOSFET from off to on.
9. Operating Temperature Range: -55°C to +150°C, making it suitable for a wide range of applications and environments.
10. Lead (Pin) Count: 3 pins, including drain, source, and gate.

Additionally, SPW47N60C3 offers fast switching speeds and low gate-source capacitance, making it ideal for high-frequency switching and synchronous rectification applications. It is commonly used in adapters, lighting systems, servers, and other high-power electronic devices.

In summary, SPW47N60C3 is a reliable and efficient MOSFET that combines high power handling capability with fast switching speeds and low power loss. Its robust package and wide operating temperature range make it suitable for a variety of demanding applications.