SZNUP2105LT1G

SZNUP2105LT1G is a high-performance, low-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor. It is widely used in various electronic circuits, particularly in low-voltage and high-frequency applications. Below are the main features and a description of the SZNUP2105LT1G:

Main Features

1. Type:
   • N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
2. Electrical Characteristics:
   • Maximum Drain-Source Voltage (Vds): 20 V
   • Maximum Continuous Drain Current (Id): 2.5 A
   • Maximum Pulsed Drain Current (Id): 4.5 A
   • Maximum Gate-Source Voltage (Vgs): 20 V
   • On-Resistance (Rds(on)): Typical 0.08 Ω (at Vgs = 4.5 V)
3. Package:
   • Package Type: SOT-23
   • Number of Pins: 3
4. Power Consumption:
   • Low power characteristics, suitable for low-voltage and high-frequency applications
5. Switching Speed:
   • Fast switching characteristics, ideal for high-frequency applications
6. Operating Temperature Range:
   • -55°C to +150°C (Industrial grade)

Application Fields

• Switching Power Supplies: Such as DC-DC converters
• Motor Drives: For driving DC motors or stepper motors
• LED Driving: For efficient LED lighting
• Communication Devices: Including radios, TVs, and other electronic devices

Feature Description

The SZNUP2105LT1G is a high-performance N-channel MOSFET that combines low on-resistance and fast switching speed, making it suitable for various low-voltage, high-frequency electronic applications. Its compact SOT-23 package and wide operating temperature range make it ideal for applications requiring space efficiency and environmental resilience. The low power consumption and high efficiency make it excellent for switching power supplies, motor drives, and LED driving applications.